Descrizione

Vendo 10 MO FET ST W20NA50 Nuovi ■ TYPICAL RDS(on) = 0.22 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100o C ■ LOW INTRINSIC CAPACITANCES ■ GATE GHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STW20NA50 500 V < 0.27 Ω 20 A 1 2 3 TO-247 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDG R Drain- gate Voltage (RGS = 20 kΩ) 500 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 o C 20 A ID Drain Current (continuous) at Tc = 100 o C 12.7 A IDM(•) Drain Current (pulsed) 80 A Ptot Total Dissipation at Tc = 25 o C 250 W Derating Factor 2 W/o C Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temper

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